IRF460 500V 21A Transistor International Rectifier (NOS)

Information รายละเอียด
Polaridad del transistor: Canal-N
Voltaje drenaje-fuente VDSS: 500 V
Corriente drenaje continua ID: 21 A
Tensión Vgs de Medición Rds(on): 10 V
Tensión umbral Vgs: 4 V
Disipación de potencia Pd (Tc=25°C): 300 W
Resistencia VGS RDS(on) máximo: 0.27 Ω
Temperatura de operación mínima: -55 °C
Temperatura de operación máxima: 150 °C
Encapsulado: TO-3
3 pines

The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control
very fast switching ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies motor controls inverters choppers audio
amplifiers and high energy pulse circuits.
pack 1 pcs