IRFZ44N MOSFET N-Channel

-Type of Transistor: MOSFET

-Type of Control Channel: N -Channel

-Maximum Power Dissipation (Pd): 83 W

-Maximum Drain-Source Voltage |Vds|: 55 V

-Maximum Gate-Source Voltage |Vgs|: 10 V

-Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

-Maximum Drain Current |Id|: 41 A

-Maximum Junction Temperature (Tj): 150 °C

-Total Gate Charge (Qg): 62 nC

-Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

-Package: TO220AB
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The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated